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| DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW BC847M series NPN general purpose transistors Product specification Supersedes data of 2003 Jul 15 2004 Mar 10 Philips Semiconductors Product specification NPN general purpose transistors FEATURES * Leadless ultra small plastic package (1 mm x 0.6 mm x 0.5 mm) * Board space 1.3 x 0.9 mm * Power dissipation comparable to SOT23. APPLICATIONS * General purpose small signal DC * Low and medium frequency AC applications * Mobile communications, digital (still) cameras, PDAs, PCMCIA cards. DESCRIPTION NPN general purpose transistor in a SOT883 leadless ultra small plastic package. PNP complement: BC857M series. MARKING TYPE NUMBER BC847AM BC847BM BC847CM ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BC847AM BC847BM BC847CM - DESCRIPTION MARKING CODE D4 D5 D6 QUICK REFERENCE DATA SYMBOL VCEO IC ICM PINNING PIN 1 2 3 base emitter collector BC847M series PARAMETER collector-emitter voltage collector current (DC) peak collector current MAX. 45 100 200 UNIT V mA mA DESCRIPTION handbook, halfpage 3 3 1 2 2 1 Bottom view MAM475 Fig.1 Simplified outline (SOT883) and symbol. VERSION SOT883 Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm 2004 Mar 10 2 Philips Semiconductors Product specification NPN general purpose transistors LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation Tamb 25 C note 1 note 2 Tstg Tj Tamb Notes storage temperature junction temperature operating ambient temperature - - -65 - -65 CONDITIONS open emitter open base open collector - - - - - - MIN. BC847M series MAX. 50 45 5 100 200 100 250 430 +150 150 +150 V V V UNIT mA mA mA mW mW C C C 1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 m copper stripline. 2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient CONDITIONS in free air note 1 note 2 Notes 1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 m copper stripline. 2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm2. 500 290 K/W K/W VALUE UNIT 2004 Mar 10 3 Philips Semiconductors Product specification NPN general purpose transistors CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector-base cut-off current emitter-base cut-off current DC current gain BC847AM BC847BM BC847CM VBE VCEsat Cc fT F Note 1. Pulse test: tp 300 s; 0.02. base-emitter voltage collector-emitter saturation voltage collector capacitance transition frequency noise figure IC = 2 mA; VCE = 5 V IC = 10 mA; VCE = 5 V IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA; note 1 IE = ie = 0; VCB = 10 V; f = 1 MHz VCE = 5 V; IC = 10 mA; f = 100 MHz IC = 200 A; VCE = 5 V; RS = 2 k; f = 1 kHz; B = 200 Hz CONDITIONS VCB = 30 V; IE = 0 VCB = 30 V; IE = 0; Tj = 150 C VEB = 5 V; IC = 0 VCE = 5 V; IC = 2 mA 110 200 420 580 - - - - 100 - - - - BC847M series MIN. 5 MAX. 15 100 220 450 800 700 770 200 400 1.5 - 10 UNIT nA A nA mV mV mV mV pF MHz dB 2004 Mar 10 4 Philips Semiconductors Product specification NPN general purpose transistors GRAPHICAL INFORMATION BC847AM MHC646 BC847M series handbook, halfpage 400 handbook, halfpage hFE (1) 1200 VBE 1000 MHC647 (mV) 300 (1) 800 200 (2) (2) 600 (3) 100 400 (3) 0 10-1 1 10 102 IC (mA) 103 200 10-1 1 10 102 IC (mA) 103 VCE = 5 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. VCE = 5 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.3 Fig.2 DC current gain; typical values. Base-emitter voltage as a function of collector current; typical values. 104 handbook, halfpage VCEsat (mV) 103 MHC648 handbook, halfpage 1200 MHC649 VBEsat (mV) 1000 (1) (2) 800 (3) 600 102 (1) (2) (3) 400 10 10-1 1 10 102 IC (mA) 103 200 10-1 1 10 102 IC (mA) 103 IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. IC/IB = 10. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. 2004 Mar 10 5 Philips Semiconductors Product specification NPN general purpose transistors GRAPHICAL INFORMATION BC847BM MHC642 BC847M series handbook, halfpage 600 handbook, halfpage 1200 MHC643 hFE (1) VBE (mV) 1000 400 (2) (1) 800 (2) 600 200 (3) (3) 400 0 10-1 1 10 102 IC (mA) 103 200 10-2 10-1 1 10 102 103 IC (mA) VCE = 5 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. VCE = 5 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.7 Fig.6 DC current gain; typical values. Base-emitter voltage as a function of collector current; typical values. 104 handbook, halfpage VCEsat (mV) 103 MHC644 handbook, halfpage 1200 MHC645 VBEsat (mV) 1000 (1) (2) 800 (3) 600 102 (1) (2) (3) 400 10 10-1 1 10 102 IC (mA) 103 200 10-1 1 10 102 I 103 C (mA) IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. IC/IB = 10. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.8 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.9 Base-emitter saturation voltage as a function of collector current; typical values. 2004 Mar 10 6 Philips Semiconductors Product specification NPN general purpose transistors GRAPHICAL INFORMATION BC847CM MHC638 BC847M series handbook, halfpage 1200 handbook, halfpage 1200 MHC639 hFE (1) VBE (mV) (1) 800 800 (2) (2) (3) 400 (3) 400 0 10-1 1 10 102 IC (mA) 103 0 10-2 10-1 1 10 102 103 IC (mA) VCE = 5 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. VCE = 5 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.10 DC current gain; typical values. Fig.11 Base-emitter voltage as a function of collector current; typical values. 104 handbook, halfpage VCEsat (mV) 103 MHC640 handbook, halfpage 1200 MHC641 VBEsat (mV) 1000 (1) (2) 800 (3) 600 102 (1) (2) (3) 400 10 10-1 1 10 102 IC (mA) 103 200 10-1 1 10 102 I 103 C (mA) IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. IC/IB = 10. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.12 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.13 Base-emitter saturation voltage as a function of collector current; typical values. 2004 Mar 10 7 Philips Semiconductors Product specification NPN general purpose transistors PACKAGE OUTLINE Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm BC847M series SOT883 L 2 b e L1 3 b1 1 e1 A A1 E D 0 0.5 scale 1 mm DIMENSIONS (mm are the original dimensions) UNIT mm A (1) 0.50 0.46 A1 max. 0.03 b 0.20 0.12 b1 0.55 0.47 D 0.62 0.55 E 1.02 0.95 e 0.35 e1 0.65 L 0.30 0.22 L1 0.30 0.22 Note 1. Including plating thickness OUTLINE VERSION SOT883 REFERENCES IEC JEDEC JEITA SC-101 EUROPEAN PROJECTION ISSUE DATE 03-02-05 03-04-03 2004 Mar 10 8 Philips Semiconductors Product specification NPN general purpose transistors DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION BC847M series This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2004 Mar 10 9 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. (c) Koninklijke Philips Electronics N.V. 2004 SCA76 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/02/pp10 Date of release: 2004 Mar 10 Document order number: 9397 750 12838 |
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